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? semiconductor components industries, llc, 2004 march, 2004 ? rev. 4 1 publication order number: MMBT3904Wt1/d MMBT3904Wt1, npn mmbt3906wt1, pnp general purpose transistors npn and pnp silicon these transistors are designed for general purpose amplifier applications. they are housed in the sot?323/sc?70 package which is designed for low power surface mount applications. ? pb?free packages are available maximum ratings rating symbol value unit collector ?emitter voltage MMBT3904Wt1 mmbt3906wt1 v ceo 40 ?40 vdc collector ?base voltage MMBT3904Wt1 mmbt3906wt1 v cbo 60 ?40 vdc emitter ?base voltage MMBT3904Wt1 mmbt3906wt1 v ebo 6.0 ?5.0 vdc collector current ? continuous MMBT3904Wt1 mmbt3906wt1 i c 200 ?200 madc thermal characteristics characteristic symbol max unit total device dissipation (note 1) t a = 25 c p d 150 mw thermal resistance, junction to ambient r ja 833 c/w junction and storage temperature t j , t stg ?55 to +150 c 1. device mounted on fr4 glass epoxy printed circuit board using the minimum recommended footprint. device package shipping 2 ordering information MMBT3904Wt1 sc?70 sc?70/sot?323 case 419 style 3 3000/tape & reel 2 3 1 marking diagram am m am = specific device code 2a = specific device code m = date code collector 3 1 base 2 emitter http://onsemi.com mmbt3906wt1 sc?70 3000/tape & reel 2a m MMBT3904Wt1 mmbt3906wt1 MMBT3904Wt1g sc?70 3000/tape & reel mmbt3906wt1g sc?70 3000/tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d.
MMBT3904Wt1, npn mmbt3906wt1, pnp http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (note 2) (i c = 1.0 madc, i b = 0) MMBT3904Wt1 (i c = ?1.0 madc, i b = 0) mmbt3906wt1 v (br)ceo 40 ?40 ? ? vdc collector ?base breakdown voltage (i c = 10 adc, i e = 0) MMBT3904Wt1 (i c = ?10 adc, i e = 0) mmbt3906wt1 v (br)cbo 60 ?40 ? ? vdc emitter ?base breakdown voltage (i e = 10 adc, i c = 0) MMBT3904Wt1 (i e = ?10 adc, i c = 0) mmbt3906wt1 v (br)ebo 6.0 ?5.0 ? ? vdc base cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) MMBT3904Wt1 (v ce = ?30 vdc, v eb = ?3.0 vdc) mmbt3906wt1 i bl ? ? 50 ?50 nadc collector cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) MMBT3904Wt1 (v ce = ?30 vdc, v eb = ?3.0 vdc) mmbt3906wt1 i cex ? ? 50 ?50 nadc on characteristics (note 2) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) MMBT3904Wt1 (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) (i c = ?0.1 madc, v ce = ?1.0 vdc) mmbt3906wt1 (i c = ?1.0 madc, v ce = ?1.0 vdc) (i c = ?10 madc, v ce = ?1.0 vdc) (i c = ?50 madc, v ce = ?1.0 vdc) (i c = ?100 madc, v ce = ?1.0 vdc) h fe 40 70 100 60 30 60 80 100 60 30 ? ? 300 ? ? ? ? 300 ? ? ? collector ?emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) MMBT3904Wt1 (i c = 50 madc, i b = 5.0 madc) (i c = ?10 madc, i b = ?1.0 madc) mmbt3906wt1 (i c = ?50 madc, i b = ?5.0 madc) v ce(sat) ? ? ? ? 0.2 0.3 ?0.25 ?0.4 vdc base ?emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) MMBT3904Wt1 (i c = 50 madc, i b = 5.0 madc) (i c = ?10 madc, i b = ?1.0 madc) mmbt3906wt1 (i c = ?50 madc, i b = ?5.0 madc) v be(sat) 0.65 ? ?0.65 ? 0.85 0.95 ?0.85 ?0.95 vdc 2. pulse test: pulse width 300 s; duty cycle 2.0%.
MMBT3904Wt1, npn mmbt3906wt1, pnp http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit small?signal characteristics current ?gain ? bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) MMBT3904Wt1 (i c = ?10 madc, v ce = ?20 vdc, f = 100 mhz) mmbt3906wt1 f t 300 250 ? ? mhz output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) MMBT3904Wt1 (v cb = ?5.0 vdc, i e = 0, f = 1.0 mhz) mmbt3906wt1 c obo ? ? 4.0 4.5 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) MMBT3904Wt1 (v eb = ?0.5 vdc, i c = 0, f = 1.0 mhz) mmbt3906wt1 c ibo ? ? 8.0 10.0 pf input impedance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) MMBT3904Wt1 (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) mmbt3906wt1 h ie 1.0 2.0 10 12 k w voltage feedback ratio (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) MMBT3904Wt1 (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) mmbt3906wt1 h re 0.5 0.1 8.0 10 x 10 ?4 small ?signal current gain (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) MMBT3904Wt1 (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) mmbt3906wt1 h fe 100 100 400 400 ? output admittance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) MMBT3904Wt1 (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) mmbt3906wt1 h oe 1.0 3.0 40 60 mhos noise figure (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k w , f = 1.0 khz) MMBT3904Wt1 (v ce = ?5.0 vdc, i c = ?100 adc, r s = 1.0 k w , f = 1.0 khz) mmbt3906wt1 nf ? ? 5.0 4.0 db switching characteristics characteristic condition symbol min max unit delay time (v cc = 3.0 vdc, v be = ? 0.5 vdc) MMBT3904Wt1 (v cc = ?3.0 vdc, v be = 0.5 vdc) mmbt3906wt1 t d ? ? 35 35 ns rise time (i c = 10 madc, i b1 = 1.0 madc) MMBT3904Wt1 (i c = ?10 madc, i b1 = ?1.0 madc) mmbt3906wt1 t r ? ? 35 35 storage time (v cc = 3.0 vdc, i c = 10 madc) MMBT3904Wt1 (v cc = ?3.0 vdc, i c = ?10 madc) mmbt3906wt1 t s ? ? 200 225 ns fall time (i b1 = i b2 = 1.0 madc) MMBT3904Wt1 (i b1 = i b2 = ?1.0 madc) mmbt3906wt1 t f ? ? 50 75 MMBT3904Wt1 figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns -0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns -9.1 v +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors
MMBT3904Wt1, npn mmbt3906wt1, pnp http://onsemi.com 4 MMBT3904Wt1 typical transient characteristics figure 3. turn ?on time i c , collector current (ma) 70 100 200 300 500 50 figure 4. rise time i c , collector current (ma) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t , rise time (ns) figure 5. storage time i c , collector current (ma) figure 6. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 r t , fall time (ns) f t , storage time (ns) s v cc = 40 v i c /i b = 10 v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v i c /i b = 10 i c /i b = 20 i c /i b = 10 i c /i b = 20 t s = t s - 1 / 8 t f i b1 = i b2 MMBT3904Wt1 MMBT3904Wt1 MMBT3904Wt1 MMBT3904Wt1 t j = 25 c t j = 125 c
MMBT3904Wt1, npn mmbt3906wt1, pnp http://onsemi.com 5 MMBT3904Wt1 typical audio small? signal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 7. noise figure f, frequency (khz) 4 6 8 10 12 2 0.1 figure 8. noise figure r s , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 500 i c = 100 a source resistance = 1.0 k i c = 50 a MMBT3904Wt1 MMBT3904Wt1 h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25 c) figure 9. current gain i c , collector current (ma) 70 100 200 300 50 figure 10. output admittance i c , collector current (ma) h , current gain h , output admittance ( mhos) figure 11. input impedance i c , collector current (ma) figure 12. voltage feedback ratio i c , collector current (ma) 30 100 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe -4 MMBT3904Wt1 MMBT3904Wt1 MMBT3904Wt1 MMBT3904Wt1
MMBT3904Wt1, npn mmbt3906wt1, pnp http://onsemi.com 6 MMBT3904Wt1 typical static characteristics figure 13. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c -55 c MMBT3904Wt1 figure 14. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma MMBT3904Wt1 figure 15. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 1.2 0.2 figure 16. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 coefficient (mv/ c) 200 -1.0 -1.5 -2.0 200 t j = 25 c v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) MMBT3904Wt1 MMBT3904Wt1
MMBT3904Wt1, npn mmbt3906wt1, pnp http://onsemi.com 7 MMBT3904Wt1 figure 17. capacitance reverse bias voltage (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 c ibo c obo t j = 25 c t j = 125 c MMBT3904Wt1
MMBT3904Wt1, npn mmbt3906wt1, pnp http://onsemi.com 8 mmbt3906wt1 figure 18. delay and rise time equivalent test circuit figure 19. storage and fall time equivalent test circuit 3 v 275 10 k 1n916 c s < 4 pf* 3 v 275 10 k c s < 4 pf* < 1 ns +10.6 v 300 ns duty cycle = 2% < 1 ns +9.1 v 10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics t j = 25 c t j = 125 c figure 20. turn ?on time i c , collector current (ma) 70 100 200 300 500 50 time (ns) 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v mmbt3906wt1 figure 21. fall time i c , collector current (ma) 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 t , fall time (ns) f v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 mmbt3906wt1 mmbt3906wt1 typical audio small? signal characteristics noise figure variations (v ce = ?5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 2.0 k i c = 100 a source resistance = 2.0 k i c = 50 a figure 22. f, frequency (khz) 1.0 2.0 3.0 4.0 5.0 0.1 figure 23. r s , source resistance (k w ) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4.0 6.0 8.0 10 2.0 12 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) mmbt3906wt1 mmbt3906wt1
MMBT3904Wt1, npn mmbt3906wt1, pnp http://onsemi.com 9 mmbt3906wt1 h parameters h fe , current gain figure 24. current gain i c , collector current (ma) 70 100 200 300 50 figure 25. output admittance i c , collector current (ma) h , output admittance ( mhos) figure 26. input impedance i c , collector current (ma) figure 27. voltage feedback ratio i c , collector current (ma) 30 100 70 10 30 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.5 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ie 0.1 0.2 1.0 2.0 5.0 10 0.5 0.1 0.2 1.0 2.0 5.0 10 0.5 7.0 5.0 0.1 0.2 1.0 2.0 5.0 10 0.5 -4 (v ce = ?10 vdc, f = 1.0 khz, t a = 25 c) 50 20 w ) mmbt3906wt1 mmbt3906wt1 mmbt3906wt1 mmbt3906wt1 0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0
MMBT3904Wt1, npn mmbt3906wt1, pnp http://onsemi.com 10 mmbt3906wt1 static characteristics figure 28. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c -55 c mmbt3906wt1 figure 29. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma mmbt3906wt1 figure 30. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 31. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1.0 v +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vs for v be(sat) v , temperature coefficients (mv/ c) q mmbt3906wt1 mmbt3906wt1
MMBT3904Wt1, npn mmbt3906wt1, pnp http://onsemi.com 11 mmbt3906wt1 c ibo c obo figure 32. capacitance reverse bias voltage (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 t j = 25 c t j = 125 c mmbt3906wt1
MMBT3904Wt1, npn mmbt3906wt1, pnp http://onsemi.com 12 package dimensions c n a l d g s b h j k 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 0.071 0.087 1.80 2.20 b 0.045 0.053 1.15 1.35 c 0.032 0.040 0.80 1.00 d 0.012 0.016 0.30 0.40 g 0.047 0.055 1.20 1.40 h 0.000 0.004 0.00 0.10 j 0.004 0.010 0.10 0.25 k 0.017 ref 0.425 ref l 0.026 bsc 0.650 bsc n 0.028 ref 0.700 ref s 0.079 0.095 2.00 2.40 0.05 (0.002) style 3: pin 1. base 2. emitter 3. collector sc?70/sot?323 case 419?04 issue l 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 MMBT3904Wt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.

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